Antimony-Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel.
basic_science · Level V
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- Record sourced from PubMed, PMID 38981026.
- Also identified by DOI 10.1021/acs.nanolett.4c01436 and PMC identifier 11273612.
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Abstract
We develop a novel metal contact approach using an antimony (Sb)-platinum (Pt) bilayer to mitigate Fermi-level pinning in 2D transition metal dichalcogenide channels. This strategy allows for control over the transport polarity in monolayer WSe<sub>2</sub> devices. By adjustment of the Sb interfacial layer thickness from 10 to 30 nm, the effective work function of the contact/WSe<sub>2</sub> interface can be tuned from 4.42 eV (p-type) to 4.19 eV (n-type), enabling selectable n-/p-FET operation in enhancement mode. The shift in effective work function is linked to Sb-Se bond formation and an emerging n-doping effect. This work demonstrates high-performance n- and p-FETs with a single WSe<sub>2</sub> channel through Sb-Pt contact modulation. After oxide encapsulation, the maximum current density at |V<sub>D</sub>| = 1 V reaches 170 μA/μm for p-FET and 165 μA/μm for n-FET. This approach shows promise for cost-effective CMOS transistor applications using a single channel material and metal contact scheme.