Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39088786.
- Also identified by DOI 10.1021/acsnano.4c03574 and PMC identifier 11328172.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Phase-change materials such as Ge-Sb-Te (GST) exhibiting amorphous and crystalline phases can be used for phase-change random-access memory (PCRAM). GST-based PCRAM has been applied as a storage-class memory; however, its relatively low ON/OFF ratio and the large Joule heating energy required for the RESET process (amorphization) significantly limit the storage density. This study proposes a phase-change nitride, CrN, with a much wider programming window (ON/OFF ratio more than 10<sup>5</sup>) and lower RESET energy (one order of magnitude reduction from GST). High-resolution transmission electron microscopy revealed a phase-change from the low-resistance cubic CrN phase into the highly resistive hexagonal CrN<sub>2</sub> phase induced by the Soret-effect. The proposed phase-change nitride could greatly expand the scope of conventional phase-change chalcogenides and offer a strategy for the next-generation of PCRAM, enabling a large ON/OFF ratio (∼10<sup>5</sup>), low switching energy (∼100 pJ), and fast operation (∼30 ns).