GaN Surface Passivation by MoS<sub>2</sub> Coating.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39132976.
- Also identified by DOI 10.1021/acs.nanolett.4c02259 and PMC identifier 11342355.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
In this study, we investigate the impact of two-dimensional MoS<sub>2</sub> coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS<sub>2</sub> coating, yielding luminescence intensity comparable to that from a QW capped by an AlGaN barrier. Our results demonstrate that MoS<sub>2</sub>, despite its quite different nature from III-nitride semiconductors, acts as an effective barrier for surface GaN QWs and suppresses spatially localized intrinsic surface states. This finding provides novel pathways for efficient III-nitride surface passivation.