An Antiferromagnetic Neuromorphic Memory Based on Perpendicularly Magnetized CoO.
basic_science · Level V
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- Record sourced from PubMed, PMID 39141575.
- Also identified by DOI 10.1021/acs.nanolett.4c02340.
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Abstract
Antiferromagnets (AFMs) are ideal materials to boost neuromorphic computing toward the ultrahigh speed and ultracompact integration regime. However, developing a suitable AFM neuromorphic memory remains an aspirational but challenging goal. In this work, we construct such a memory based on the CoO/Pt heterostructure, in which the collinear insulating AFM CoO shows a strong perpendicular anisotropy facilitating its electrical readout and writing. Utilizing the unique nonlinear response and bipolar fading memory properties of the device, we demonstrate a multidimensional reservoir computing beyond the traditional binary paradigm. These results are expected to pave the way toward next-generation fast and massive neuromorphic computing.