High-Performance Proton Field-Effect Transistor Based on Two-Dimensional Cd Vacancy-Resided Cd_0.85PS₃Li_0.15H_0.15.

Abstract

Ion transport is a critical phenomenon underpinning numerous biological, physical, and chemical systems. Proton transistors leveraging proton transport face significant limitations, such as a low on-off ratio and deficient carrier mobility, which restrict their applicability in biological and other scenarios. This study explores the use of two-dimensional (2D) vacancy-residing transition metal phosphorus trichallcogenide-based membranes as the active layer for proton field-effect transistors. The synthesized Cd_0.85PS₃Li_0.15H_0.15 membrane exhibits a well-organized layered structure and high hydrophilicity, with nanometer-sized interlayers containing interconnected water networks. These distinct features facilitate proton conduction, leading to a high proton conductivity value of 0.83 S cm^-1 at 98% relative humidity and 90 °C, with an activation energy of 0.26 eV. The Cd_0.85PS₃Li_0.15H_0.15-based proton transistor demonstrates tunability via gate voltage, thereby enabling effective modulation of proton flow across source and drain electrodes. The transistor notably showcases superior switching characteristics, with an on/off ratio surpassing 5.51 and a carrier mobility of 8.84 × 10^-2 cm² V^-1 s^-1. The underlying mechanism for this performance enhancement is attributed to electric-field-induced switching in Cd vacancies. This research boosts the development of highly versatile ionotropic devices by introducing advanced 2D ion-conductive membranes.