Quantum States Induced by Strong Interface Coupling in a 2D VSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> Heterostructure.
basic_science · Level V
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- Record sourced from PubMed, PMID 39185922.
- Also identified by DOI 10.1021/acsnano.4c03139.
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Abstract
We have successfully fabricated single-layer (SL) 1T-VSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructures using molecular beam epitaxy (MBE), which exhibits uniform moiré patterns on the heterostructure surface. Scanning tunneling microscopy/spectroscopy (STM/STS) reveals a notable quantum state near the Fermi energy, robust across the entire moiré lattice. This quantum state peak shifts slightly across different domain ranges, suggesting an elastic strain dependence in SL VSe<sub>2</sub>, confirmed by geometric phase analysis (GPA) simulations. Density functional theory (DFT) calculations indicate that the enhanced quantum state results from charge redistribution between the substrate and the epifilm with the orbitals of Se atoms in the deformed VSe<sub>2</sub> playing a dominant role.