Gate Modulation of Dissipationless Nonlinear Quantum Geometric Current in 2D Te.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39193777.
- Also identified by DOI 10.1021/acs.nanolett.4c02224 and PMC identifier 11378762.
- Licence recorded as CC BY-NC-ND.
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Abstract
Two-dimensional trigonal tellurium (2D Te), a narrow-bandgap semiconductor with a bandgap of approximately 0.3 eV, hosts Weyl points near the band edge and exhibits a narrow, strong Berry curvature dipole (BCD). By applying a back-gate bias to align the Fermi level with the BCD, a sharp increase in the dissipationless transverse nonlinear Hall response is observed in 2D Te. Gate modulation of the BCD demonstrates an on/off ratio of 10<sup>4</sup> and a responsivity of nearly 10<sup>6</sup> V/W, while the longitudinal current induced by band modulation reaches an on/off ratio of about 10. This current is sustained up to 200 K, exhibiting a change of 3 orders of magnitude. The inclusion of both transistor action and rectification enhances the temperature sensitivity of the dissipationless Hall current, offering potential applications in electrothermal detectors and sensors and highlighting the significance of topological properties in advancing electronic applications.