Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39230253.
- Also identified by DOI 10.1021/acsnano.4c02164 and PMC identifier 11412230.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS<sub>2</sub> growth with tunable morphologies─from separated single-crystal domains to continuous monolayer films─on a variety of substrates, including sapphire, SiO<sub>2</sub>, and Au. These WS<sub>2</sub> films exhibit narrow neutral exciton photoluminescence line widths down to 27-28 meV and room-temperature mobility up to 34-36 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS<sub>2</sub>, Mo<sub><i>x</i></sub>W<sub>1-<i>x</i></sub>S<sub>2</sub> alloys, and in-plane WS<sub>2</sub>-MoS<sub>2</sub> heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.