Highly Tunable Interlayer Coupling and Electronic Structures of Few-Layer Graphene with Pressure.
basic_science · Level V
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- Record sourced from PubMed, PMID 39259167.
- Also identified by DOI 10.1021/acs.nanolett.4c02035.
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Abstract
The interlayer electronic coupling is responsible for the electronic structure evolution from monolayer graphene to graphite and for the moiré potential in twisted bilayer graphene. Here we demonstrate that the interlayer transfer integral (hopping parameter) increases nearly 40% with a quite moderate pressure of ∼3.5 GPa, manifested by the resonance peak shift in the infrared spectra of all 2-10 L graphene. A simple model based on the Morse potential enabled us to establish the relationship between the transfer integral and pressure. Our work provides fundamental insights into the dependence of the electronic coupling on the interlayer distance.