Robust Magnetic-Field-Free Perpendicular Magnetization Switching by Manipulating Spin Polarization Direction in RuO<sub>2</sub>/[Pt/Co/Pt] Heterojunctions.
basic_science · Level V
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- Record sourced from PubMed, PMID 39279359.
- Also identified by DOI 10.1021/acsnano.4c09004.
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Abstract
Perpendicular magnetization switching by a magnetic-field-free, energy-efficient electrical approach has remained a great challenge. Here, we demonstrate the realization of robust magnetic-field-free perpendicular magnetization switching in the (101)RuO<sub>2</sub>/[Pt/Co/Pt] heterojunction by manipulating the spin polarization direction. We proposed that the relative strength of out-of-plane spin currents with out-of-plane spin polarization <b>σ</b><sub><i>z</i></sub> and in-plane spin polarization <b>σ</b><sub><i>y</i></sub> can be effectively manipulated by tuning the nominal thickness of [Pt/Co/Pt] multilayers and the direction of applied electric current with respect to the RuO<sub>2</sub> crystal orientation. When the electric current is applied along RuO<sub>2</sub> [010] direction and the net spin current with spin polarization <b>σ</b><sub><i>y</i></sub> is canceled out, the "robust" perpendicular magnetization switching driven by pure <b>σ</b><sub><i>z</i></sub> is achieved in (101)RuO<sub>2</sub>/[Pt/Co/Pt], where the term "robust" means that the switching polarity (counterclockwise) does not change and the switching ratio reduces very slowly with increasing magnitude of in-plane magnetic field <i>H</i><sub><i>x</i></sub> and/or <i>H</i><sub><i>y</i></sub> in a wide range of ±500 Oe. Our findings provide a technique to effectively manipulate the spin currents, which is beneficial for the investigation of antiferromagnetic spintronic devices with high magnetic field stability and reliable magnetization switching.