Advanced CMOS manufacturing of superconducting qubits on 300 mm wafers.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39294381.
- Also identified by DOI 10.1038/s41586-024-07941-9 and PMC identifier 11446867.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The development of superconducting qubit technology has shown great potential for the construction of practical quantum computers<sup>1,2</sup>. As the complexity of quantum processors continues to grow, the need for stringent fabrication tolerances becomes increasingly critical<sup>3</sup>. Utilizing advanced industrial fabrication processes could facilitate the necessary level of fabrication control to support the continued scaling of quantum processors. However, at present, these industrial processes are not optimized to produce high-coherence devices, nor are they a priori compatible with the approaches commonly used to make superconducting qubits. Here we demonstrate superconducting transmon qubits manufactured in a 300 mm complementary metal-oxide-semiconductor (CMOS) pilot line using industrial fabrication methods, with resulting relaxation and coherence times exceeding 100 μs. We show across-wafer, large-scale statistics of coherence, yield, variability and ageing that confirm the validity of our approach. The presented industry-scale fabrication process, which uses only optical lithography and reactive-ion etching, has a performance and yield in line with conventional laboratory-style techniques utilizing metal lift-off, angled evaporation and electron-beam writing<sup>4</sup>. Moreover, it offers the potential for further upscaling through three-dimensional integration<sup>5</sup> and more process optimization. This result marks the advent of an alternative and new, large-scale, truly CMOS-compatible fabrication method for superconducting quantum computing processors.