Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels.
basic_science · Level V
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- Record sourced from PubMed, PMID 39316704.
- Also identified by DOI 10.1021/acs.nanolett.4c03900.
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Abstract
The excessive power consumption is challenging for phase change memory (PCM) on its way to becoming universal memory in complex hierarchies of memory systems. Here, from the perspective of device structure, by adding a nanocurrent-channel (NCC) layer between the electrode layer and phase change layer, a RESET power consumption reduction by more than 95% and 10 times faster SET speed were realized simultaneously. Through the first principle calculations, Au and SiO<sub>2</sub> were screened as the metal and insulating matrix material of NCC layer, respectively. Our PCM device with a Au-SiO<sub>2</sub> NCC layer shows an ultralow RESET power consumption, down to 381 fJ, and an ultrafast SET speed (8 ns). Much higher current density near NCC in the phase change layer and thermal barrier effect of insulating matrix material were confirmed by finite element analysis (FEA), and the role of Au nanochannels was revealed by transmission electron microscopy (TEM). Our NCC layer structure provides a simple and practicable method to significantly decrease PCM power consumption.