Molecular Engineering of Coordination Ligand for Multifunctional Sol-Gel Oxides.
basic_science · Level V
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- Record sourced from PubMed, PMID 39328050.
- Also identified by DOI 10.1002/adma.202409906.
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Abstract
Here a ligand exchange strategy for synthesizing sol-gel oxides is demonstrated to achieve multifunctionality including direct photolithography, high dielectric strength, and high charge carrier mobility, which is challenging to obtain in such oxides. For this purpose, a series of bidentate ligands with azide termini and ethylene-glycol bridges is synthesized, and these ligands are universally applicable to the synthesis of a variety of dielectric and semiconductor oxides. Optimized photolithography conditions yield a high-quality ZrO<sub>2</sub> dielectric film with a high dielectric constant and strength of ≈18 and ≈7 MV cm<sup>-1</sup>, respectively. Additionally, this strategy is applied to semiconductor oxides such as In<sub>2</sub>O<sub>3</sub> and ZnO, and the all-oxide-patterned solution-processed thin-film transistor (TFT) demonstrates a high charge carrier mobility of ≈40 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. An oxide TFT array is fully photopatterned on a 4-inch Si wafer; uniform performances are observed across these devices. This study suggests the possibility of realizing multifunctional oxides for application in advanced electronics using simple ligand exchange chemistry.