Highly passivated TOPCon bottom cells for perovskite/silicon tandem solar cells.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39349430.
- Also identified by DOI 10.1038/s41467-024-52309-2 and PMC identifier 11442652.
- Licence recorded as CC BY-NC-ND.
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Abstract
Tunnel oxide passivated contact (TOPCon) silicon solar cells are rising as a competitive photovoltaic technology, seamlessly blending high efficiency with cost-effectiveness and mass production capabilities. However, the numerous defects from the fragile silicon oxide/c-Si interface and the low field-effect passivation due to the inadequate boron in-diffusion in p-type polycrystalline silicon (poly-Si) passivated contact reduce their open-circuit voltages (V<sub>OC</sub>s), impeding their widespread application in the promising perovskite/silicon tandem solar cells (TSCs) that hold a potential to break 30% module efficiency. To address this, we have developed a highly passivated p-type TOPCon structure by optimizing the oxidation conditions, boron in-diffusion, and aluminium oxide hydrogenation, thus pronouncedly improving the implied V<sub>OC</sub> (iV<sub>OC</sub>) of symmetric samples with p-type TOPCon structures on both sides to 715 mV and the V<sub>OC</sub> of completed double-sided TOPCon bottom cells to 710 mV. Consequently, integrating with perovskite top cells, our proof of concept of 1 cm<sup>2</sup> n-i-p perovskite/silicon TSCs exhibit V<sub>OC</sub>s exceeding 1.9 V and a high efficiency of 28.20% (certified 27.3%), which paves a way for TOPCon cells in the commercialization of future tandems.