Impact of Thickness-Dependent Nanophotonic Effects on the Optical Response of Color Centers in Hexagonal Boron Nitride.
basic_science · Level V
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- Record sourced from PubMed, PMID 39353565.
- Also identified by DOI 10.1021/acs.nanolett.4c03300.
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Abstract
Among a broad diversity of color centers hosted in layered van der Waals materials, the negatively charged boron vacancy (V<sub>B</sub><sup>-</sup>) center in hexagonal boron nitride (hBN) is garnering considerable attention for the development of quantum sensing units on a two-dimensional platform. In this work, we investigate how the optical response of an ensemble of V<sub>B</sub><sup>-</sup> centers evolves with the hBN thickness in a range of a few to hundreds of nanometers. We show that the photoluminescence intensity features a nontrivial evolution with thickness, which is quantitatively reproduced by numerical calculations taking into account thickness-dependent variations of the absorption, radiative lifetime, and radiation pattern of V<sub>B</sub><sup>-</sup> centers. Besides providing an important resource to optimize the performances of quantum sensing units based on V<sub>B</sub><sup>-</sup> centers in hBN, the thickness-dependent nanophotonic effects discussed in this work generally apply to any type of color center embedded in a van der Waals material.