Single ambipolar OECT-based inverter with volatility and nonvolatility on demand.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39383214.
- Also identified by DOI 10.1126/sciadv.adq9405 and PMC identifier 11463256.
- Licence recorded as CC BY-NC.
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Abstract
Organic electrochemical transistor (OECT)-based inverter introduces new prospects for energy-efficient brain-inspired artificial intelligence devices. Here, we report single-component OECT-based inverters by incorporating ambipolar p(gDPP-V). Notably, p(gDPP-V) shows state-of-the-art ambipolar OECT performances in both conventional (p/n-type mode transconductance of 29/25 S cm<sup>-1</sup>) and vertical (transconductance of 297.2/292.4 μS μm<sup>-2</sup> under p/n operation) device architectures. Especially, the resulting highly stable vertical OECT-based inverter shows a high voltage gain of 105 V V<sup>-1</sup> under a low driving voltage of 0.8 V. The inverter exhibits undiscovered voltage-regulated dual mode: volatile receptor and nonvolatile synapse. Moreover, applications of physiology signal recording and demonstrations of NAND/NOR logic circuits are investigated within the volatile feature, while neuromorphic simulations with a convolutional neural network and image memorizing capabilities are explored under the nonvolatile behavior. The ambipolar OECT-based inverter, capable of both volatile and nonvolatile operations, provides possibilities for the applications of reconfigurable complementary logic circuits in novel neuromorphic computing paradigms.