Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39455552.
- Also identified by DOI 10.1038/s41467-024-52929-8 and PMC identifier 11511962.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
As a basic component of the versatile semiconductor devices, metal oxides play a critical role in modern electronic information industry. However, ultra-high precision nanopatterning of metal oxides often involves multi-step lithography and transfer process, which is time-consuming and costly. Here, we report a strategy, using metal-organic compounds as solid precursor photoresist for multi-photon lithography and post-sintering, to realize ultra-high precision additive manufacturing of metal oxides. As a result, we gain metal oxides including ZnO, CuO and ZrO<sub>2</sub> with a critical dimension of 35 nm, which sets a benchmark for additive manufacturing of metal oxides. Besides, atomic doping can be easily accomplished by including the target element in precursor photoresist, and heterogeneous structures can also be created by multiple multi-photon lithography, allowing this strategy to accommodate the requirements of various semiconductor devices. For instance, we fabricate an ZnO photodetector by the proposed strategy.