Proximity-Induced Exchange Interaction and Prolonged Valley Lifetime in MoSe<sub>2</sub>/CrSBr Van-Der-Waals Heterostructure with Orthogonal Spin Textures.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39466188.
- Also identified by DOI 10.1021/acsnano.4c07336 and PMC identifier 11562783.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Heterostructures, composed of semiconducting transition-metal dichalcogenides (TMDC) and magnetic van-der-Waals materials, offer exciting prospects for the manipulation of the TMDC valley properties via proximity interaction with the magnetic material. We show that the atomic proximity of monolayer MoSe<sub>2</sub> and the antiferromagnetic van-der-Waals crystal CrSBr leads to an unexpected breaking of time-reversal symmetry, with originally perpendicular spin directions in both materials. The observed effect can be traced back to a proximity-induced exchange interaction via first-principles calculations. The resulting spin splitting in MoSe<sub>2</sub> is determined experimentally and theoretically to be on the order of a few meV. Moreover, we find a more than 2 orders of magnitude longer valley lifetime of spin-polarized charge carriers in the heterostructure, as compared to monolayer MoSe<sub>2</sub>/SiO<sub>2</sub>, driven by a Mott transition in the type-III band-aligned heterostructure.