A nonvolatile magnon field effect transistor at room temperature.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39472444.
- Also identified by DOI 10.1038/s41467-024-53524-7 and PMC identifier 11522597.
- Licence recorded as CC BY-NC-ND.
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Abstract
Information industry is one of the major drivers of the world economy. Its rapid growth, however, leads to severe heat problem which strongly hinders further development. This calls for a non-charge-based technology. Magnon, capable of transmitting spin information without electron movement, holds tremendous potential in post-Moore era. Given the cornerstone role of the field effect transistor in modern electronics, creating its magnonic equivalent is highly desired but remains a challenge. Here, we demonstrate a nonvolatile three-terminal lateral magnon field effect transistor operating at room temperature. The device consists of a ferrimagnetic insulator (Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub>) deposited on a ferroelectric material [Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>0.7</sub>Ti<sub>0.3</sub>O<sub>3</sub> or Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub>], with three Pt stripes patterned on Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub> as the injector, gate, and detector, respectively. The magnon transport in Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub> can be regulated by the gate voltage pulses in a nonvolatile manner with a high on/off ratio. Our findings provide a solid foundation for designing energy-efficient magnon-based devices.