Metal chalcogenide electron extraction layers for nip-type tin-based perovskite solar cells.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39487132.
- Also identified by DOI 10.1038/s41467-024-53713-4 and PMC identifier 11530694.
- Licence recorded as CC BY-NC-ND.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Tin-based perovskite solar cells have garnered attention for their biocompatibility, narrow bandgap, and long thermal carrier lifetime. However, nip-type tin-based perovskite solar cells have underperformed largely due to the indiscriminate use of metal oxide electron transport layers originally designed for nip-type lead-based perovskite solar cells. Here, we reveal that this underperformance is caused by oxygen vacancies and deeper energy levels in metal oxide. To address these issues, we propose a metal chalcogenide electron transport layer, specifically Sn(S<sub>0.92</sub>Se<sub>0.08</sub>)<sub>2</sub>, which circumvents the oxygen molecules desorption and impedes the Sn<sup>2+</sup> oxidation. As a result, tin-based perovskite solar cells with Sn(S<sub>0.92</sub>Se<sub>0.08</sub>)<sub>2</sub> demonstrate a V<sub>OC</sub> increase from 0.48 - 0.73 V and a power conversion efficiency boost from 6.98 - 11.78%. Additionally, these cells exhibit improved stability, retaining over 95% of their initial efficiency after 1632 h. Our findings showcase metal chalcogenides as promising candidates for future nip-type tin-based perovskite solar cell applications.