Production of Ultrathin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces.

Neilson, Joseph; Caffrey, Eoin; Cassidy, Oran; Gabbett, Cian; Synnatschke, Kevin; Schneider, Eileen; Munuera, Jose Maria; Carey, Tian et al. · ACS Nano · 2024

basic_science · Level V

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Abstract

Solution-processable 2D materials are promising candidates for a range of printed electronics applications. Yet maximizing their potential requires solution-phase processing of nanosheets into high-quality networks with carrier mobility (μ<sub>Net</sub>) as close as possible to that of individual nanosheets (μ<sub>NS</sub>). In practice, the presence of internanosheet junctions generally limits electronic conduction, such that the ratio of junction resistance (<i>R</i><sub>J</sub>) to nanosheet resistance (<i>R</i><sub>NS</sub>), determines the network mobility via μ<sub>NS</sub>/μ<sub>Net</sub> ≈ <i>R</i><sub>J</sub>/<i>R</i><sub>NS</sub> + 1. Hence, achieving <i>R</i><sub>J</sub>/<i>R</i><sub>NS</sub> < 1 is a crucial step for implementation of 2D materials in printed electronics applications. In this work, we utilize an advanced liquid-interface deposition process to maximize nanosheet alignment and network uniformity, thus reducing <i>R</i><sub>J</sub>. We demonstrate the approach using graphene and MoS<sub>2</sub> as model materials, achieving low <i>R</i><sub>J</sub>/<i>R</i><sub>NS</sub> values of 0.5 and 0.2, respectively. The resultant graphene networks show a high conductivity of σ<sub>Net</sub> = 5 × 10<sup>4</sup> S/m while our semiconducting MoS<sub>2</sub> networks demonstrate record mobility of μ<sub>Net</sub> = 30 cm<sup>2</sup>/(V s), both at extremely low network thickness (<i>t</i><sub><i>Net</i></sub> < 10 nm). Finally, we show that the deposition process is compatible with nonlayered quasi-2D materials such as silver nanosheets (AgNS), achieving network conductivity close to bulk silver for networks <100 nm-thick.