Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39548068.
- Also identified by DOI 10.1038/s41467-024-54160-x and PMC identifier 11568188.
- Licence recorded as CC BY-NC-ND.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Eco-friendly Sn-based perovskites show significant potential for high-performance second near-infrared window light-emitting diodes (900 nm - 1700 nm). Nevertheless, achieving efficient and stable Sn-based perovskite second near-infrared window light-emitting diodes remains challenging due to the propensity of Sn<sup>2+</sup> to oxidize, resulting in detrimental Sn<sup>4+</sup>-induced defects and compromised device performance. Here, we present a targeted strategy to eliminate Sn<sup>4+</sup>-induced defects through moisture-triggered hydrolysis of tin tetrahalide, without degrading Sn<sup>2+</sup> in the CsSnI<sub>3</sub> film. During the moisture treatment, tin tetrahalide is selectively hydrolyzed to Sn(OH)<sub>4</sub>, which provides sustained protection. As a result, we successfully fabricate second near-infrared window light-emitting diodes emitting at 945 nm, achieving a performance breakthrough with an external quantum efficiency of 7.6% and an operational lifetime reaching 82.6 h.