p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration.
basic_science · Level V
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- Record sourced from PubMed, PMID 39561989.
- Also identified by DOI 10.1021/acs.nanolett.4c03742.
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Abstract
The lack of low temperature processable, high-performance p-type oxide thin-film transistors (TFTs) limits their implementation in monolithically integrated back-end-of-line (BEOL) CMOS circuitries. In this work, we demonstrate a reactive magnetron-sputtered SnO<sub><i>x</i></sub> TFT with unprecedented hole field-effect mobility (μ<sub><i>FE-hole</i></sub>) of 38.7 cm<sup>2</sup>/V·s, as well as an on/off current ratio (<i>I</i><sub><i>on/off</i></sub>) of 2.5 × 10<sup>3</sup> and lower subthreshold swing (SS) of 240.9 mV/dec when compared to reported works on p-type oxide-based TFTs. Material characterization correlated with the SnO<sub><i>x</i></sub> TFTs' electrical behavior elucidated the performance to the structural and compositional phase modulation of the SnO<sub><i>x</i></sub> thin films, modulated by O<sub>2</sub> partial pressure during deposition and post-encapsulation annealing. By integrating the SnO<sub><i>x</i></sub> TFT with an IGZO TFT in both planar and stacked complementary FET-like form, we demonstrated a true oxide-based CMOS inverter, achieving one of the highest voltage gains of 57 and the lowest static power consumption down to 34 pW for both on and off states.