Printed High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39564745.
- Also identified by DOI 10.1002/adma.202410060 and PMC identifier 11854872.
- Licence recorded as CC BY-NC.
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Abstract
Non-volatile memristors dynamically switch between high (HRS) and low resistance states (LRS) in response to electrical stimuli, essential for electronic memories, neuromorphic computing, and artificial intelligence. High-entropy Prussian blue analogs (HE-PBAs) are promising insertion-type battery materials due to their diverse composition, high structural integrity, and favorable ionic conductivity. This work proposes a non-volatile, bipolar memristor based on HE-PBA. The device, featuring an active layer of HE-PBA sandwiched between Ag and ITO electrodes, is fabricated by inkjet printing and microplotting. The conduction mechanism of the Ag/HE-PBA/ITO device is systematically investigated. The results indicate that the transition between HRS and LRS is driven by an insulating-metallic transition, triggered by extraction/insertion of highly mobile Na<sup>+</sup> ions upon application of an electric field. The memristor operates through a low-energy process akin to Na<sup>+</sup> shuttling in Na-ion batteries rather than depending on formation/rupture of Ag filaments. Notably, it showcases promising characteristics, including non-volatility, self-compliance, and forming-free behavior, and further exhibits low operation voltage (V<sub>SET</sub> = -0.26 V, V<sub>RESET</sub> = 0.36 V), low power consumption (P<sub>SET</sub> = 26 µW, P<sub>RESET</sub> = 8.0 µW), and a high R<sub>OFF</sub>/R<sub>ON</sub> ratio of 10<sup>4</sup>. This underscores the potential of high-entropy insertion materials for developing printed memristors with distinct operation mechanisms.