One-step gas-phase syntheses of few-layered single-phase Ti<sub>2</sub>NCl<sub>2</sub> and Ti<sub>2</sub>CCl<sub>2</sub> MXenes with high stabilities.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39609424.
- Also identified by DOI 10.1038/s41467-024-54815-9 and PMC identifier 11605084.
- Licence recorded as CC BY-NC-ND.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
With the iteration of etching techniques, MXenes have exhibited astounding accomplishments. Nevertheless, intricate procedures, expensive precursors, and degradation present obstacles for practical application. Although chemical vapor deposition has been developed as a solution, direct syntheses of few-layered single-phase MXenes remain an open challenge, especially for Ti<sub>2</sub>NCl<sub>2</sub>. Here, we propose a one-step gas-phase synthetic method to fabricate few-layered single-phase Ti<sub>2</sub>NCl<sub>2</sub> and Ti<sub>2</sub>CCl<sub>2</sub>. Design of the activation section and segregation from the synthetic zone are the key factors. The reaction paths, synthetic mechanism, and degradation behavior are revealed. Due to the low proportion of Ti vacancies, the time constant of the Ti<sub>2</sub>CCl<sub>2</sub> solution is 73 times longer than that of Ti<sub>2</sub>CCl<sub>x</sub>. Furthermore, the specific capacity for Li<sup>+</sup> storage with Ti<sub>2</sub>NCl<sub>2</sub> is 1.37 times greater than that of Ti<sub>2</sub>CCl<sub>2</sub>. The one-step gas-phase method will accelerate practical application of MXenes.