Defect-Induced Atomical Zn-O/N-C Bonding Promotes Efficient Charge Transfer in S-Scheme Interface for Bubble Level Solar Hydrogen Production.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39642038.
- Also identified by DOI 10.1021/acs.nanolett.4c05129.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Establishing efficient and clear atomic-level charge transfer channels presents a significant challenge in the design of effective photocatalysts. A sound strategy has been developed herein involving the construction of defect-induced heterostructures that create chemical bonds serving as charge transfer channels at the heterojunction interface. In situ XPS, alongside theoretical calculations, demonstrates the successful construction of Zn-O/N-C as atomic charge transfer channels. Our findings reveal that the introduction of zinc vacancies (V<sub>Zn</sub>) reduces the carrier transport activation energy (CTAE) from 155.2 meV for ZIS/CN to 128.7 meV for V<sub>Zn</sub>-ZIS/CN. Consequently, the optimal V<sub>Zn</sub>-ZIS/CN achieves a high hydrogen evolution rate of 22.26 mmol g<sup>-1</sup> h<sup>-1</sup> without Pt as a cocatalyst, which is approximately 57 times greater compared to that of ZIS/CN. Notably, hydrogen is generated at bubble levels under natural sunlight. This work provides insights into the mechanisms by which defect-induced heterostructure building strategies can introduce chemical bonds at the heterojunction interface.