Nanoscale Ferroelectric Programming of van der Waals Heterostructures.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39670523.
- Also identified by DOI 10.1021/acs.nanolett.4c03574 and PMC identifier 11673570.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
We demonstrate an approach to creating nanoscale potentials in van der Waals layers integrated with a buried programmable ferroelectric layer. Using ultra-low-voltage electron beam lithography (ULV-EBL), we can program the ferroelectric polarization in Al<sub>1-<i>x</i></sub>B<sub><i>x</i></sub>N (AlBN) thin films, generating structures with sizes as small as 35 nm. We demonstrate the ferroelectric field effect with a graphene/vdW stack on AlBN by creating a p-n junction. This resist-free, high-resolution, contactless patterning method offers a new pathway to integrate ferroelectric films with a wide range of two-dimensional layers including transition-metal dichalcogenides (TMD), enabling arbitrary programming and top-down creation of multifunctional devices.