Giant Ultrabroadband Bulk Photovoltaic Effect Engendered by Two-Photon Absorption in α-In<sub>2</sub>Se<sub>3</sub> for Chiral Terahertz Wave Generation.

Lei, Zhen; Xi, Yayan; Shi, Mingjian; Xu, Guorong; Huang, Yuanyuan; Xu, Xinlong · Adv Mater · 2025

basic_science · Level V

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Abstract

Bulk photovoltaic effect (BPVE) can break the Shockley-Queisser limit by leveraging the inherent asymmetry of crystal lattice without a junction. However, this effect is mainly confined to UV-vis spectrum due to the wide-bandgap nature of traditional ferroelectric materials, thereby limiting the exploration of the infrared light-driven efficient BPVE. Herein, giant two-photon absorption (TPA) driven BPVE is uncovered from visible to infrared in ferroelectric α-In<sub>2</sub>Se<sub>3</sub> utilizing wavelength-tunable terahertz (THz) emission spectroscopy. Remarkably, α-In<sub>2</sub>Se<sub>3</sub> exhibits exceptional THz emission efficiency in the infrared region, surpassing renowned THz emitters like p-InAs and achieving an efficiency approximately eight times the magnitude of standard ZnTe. The power exponent-type pump fluence and quadruple polarization features reveal a unique TPA-driven BPVE, corroborated by a fourth-order nonlinear oscillator model. Notably, TPA-engendered BPVE efficiency approaches 68% of that observed in the single-photon absorption process. Moreover, the TPA responses display clear polarization anisotropy, with considerably relative phase and amplitude driven by synchronous in-plane and out-of-plane polarization, leading to chiral THz waves with high efficiency, tunable orientation, and controllable ellipticity. This work highlights the advantages of TPA-induced BPVE responses in narrow-bandgap ferroelectric semiconductors, enhancing spectral utilization efficiency, aiding high-performance devices based on BPVE, and guiding chiral THz wave design.