Ultrawide Bandgap Diamond/ε-Ga<sub>2</sub>O<sub>3</sub> Heterojunction pn Diodes with Breakdown Voltages over 3 kV.
basic_science · Level V
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- Record sourced from PubMed, PMID 39680736.
- Also identified by DOI 10.1021/acs.nanolett.4c05446.
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Abstract
Robust bipolar devices based on exclusively ultrawide bandgap (UWBG) semiconductors are highly desired for advanced power electronics. The heterojunction strategy has been a prevailing method for fabricating a bipolar device due to the lack of effective bipolar doping in the same UWBG material. Here, we demonstrate a unique heterojunction design integrating the p-type diamond and n-type ε-Ga<sub>2</sub>O<sub>3</sub> that achieves remarkable breakdown voltages surpassing 3000 V. Despite the lattice mismatch, the heteroepitaxial ε-Ga<sub>2</sub>O<sub>3</sub> film is established on the diamond substrate, forming an atomically sharp interface with C-O-Ga bonding and enabling the O-terminated diamond surface for constructing an effective rectifying heterojunction. The ultra-high-quality interface, together with the lightly doped diamond as the drift layer, largely weakens the commonly met electric field crowding effect in power diodes and provides a cost-effective thermal management route. This study provides an efficient heterojunction design to realize the potential of UWBG semiconductors for ultra-high-power applications.