Gatemon Qubit on a Germanium Quantum-Well Heterostructure.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39690124.
- Also identified by DOI 10.1021/acs.nanolett.4c05539.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an aluminum microwave circuit on a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to the superconducting proximity effect, the high-mobility two-dimensional hole gas confined in this well provides a gate-tunable superconducting weak link between two Al contacts. We perform Rabi oscillation and Ramsey interference measurements, demonstrate the gate-voltage dependence of the qubit frequency, and measure the qubit anharmonicity. We find relaxation times <i>T</i><sub>1</sub> up to 119 ns, and Ramsey coherence times <i>T</i><sub>2</sub><sup>*</sup> up to 70 ns, and a qubit frequency gate-tunable over 3.5 GHz. The reported proof-of-concept reproduces the results of a very recent work [Sagi et al. <i>Nat. Commun.</i> 2024, 15, 6400] using similar Ge/SiGe heterostructures, thereby validating a novel platform for the development of gatemons and parity-protected cos(2ϕ) qubits.