Robust ferromagnetism in wafer-scale Fe<sub>3</sub>GaTe<sub>2</sub> above room-temperature.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39737950.
- Also identified by DOI 10.1038/s41467-024-54936-1 and PMC identifier 11686305.
- Licence recorded as CC BY-NC-ND.
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Abstract
The discovery of ferromagnetism in van der Waals (vdW) materials has enriched the understanding of two-dimensional (2D) magnetic orders and opened new avenues for fundamental physics research and next generation spintronics. However, achieving ferromagnetic order at room temperature, along with strong perpendicular magnetic anisotropy, remains a significant challenge. In this work, we report wafer-scale growth of vdW ferromagnet Fe<sub>3</sub>GaTe<sub>2</sub> using molecular beam epitaxy. The epitaxial Fe<sub>3</sub>GaTe<sub>2</sub> films exhibit robust ferromagnetism, exemplified by high Curie temperature (T<sub>C</sub> = 420 K) and large perpendicular magnetic anisotropy (PMA) constant K<sub>U</sub> = 6.7 × 10<sup>5 </sup>J/m<sup>3</sup> at 300 K for nine-unit-cell film. Notably, the ferromagnetic order is preserved even in the one-unit-cell film with T<sub>C</sub> reaching 345 K, benefiting from the strong PMA (K<sub>U</sub> = 1.8×10<sup>5 </sup>J/m<sup>3</sup> at 300 K). In comparison to exfoliated Fe<sub>3</sub>GaTe<sub>2</sub> flakes, our epitaxial films with the same thickness show the significant enhancement of T<sub>C</sub>, which could be ascribed to the tensile strain effect from the substrate. The successful realization of wafer-scale ferromagnetic Fe<sub>3</sub>GaTe<sub>2</sub> films with T<sub>C</sub> far above room temperature represents a substantial advancement (in some aspects or some fields, e.g. material science), paving the way for the development of 2D magnet-based spintronic devices.