Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms.

Abstract

Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout electronics can be integrated into the same chip or die, opens up an opportunity to break out the challenges of qubit size, I/O, and integrability. However, the power consumption of cryogenic CMOS-based control/readout electronics cannot support thousands or millions of qubits. Here, we show that III-V two-dimensional electron gas and Nb superconductor-based cryogenic electronics can be integrated with Si and operate at extremely low power levels, enabling the control and readout for millions of qubits. Our devices offer a unity gain cutoff frequency of 601 GHz, a unity power gain cutoff frequency of 593 GHz, and a low noise indication factor <math xmlns="http://www.w3.org/1998/Math/MathML"> <mfenced> <mrow> <msqrt> <mrow> <msub><mrow><mi>I</mi></mrow> <mrow><mi>D</mi></mrow> </msub> </mrow> </msqrt> <mspace></mspace> <msubsup><mrow><mi>g</mi></mrow> <mrow><mi>m</mi></mrow> <mrow><mo>-</mo> <mn>1</mn></mrow> </msubsup> </mrow> </mfenced> </math> of <math xmlns="http://www.w3.org/1998/Math/MathML"><mn>0.21</mn> <msqrt><mrow><mi>Vmm</mi></mrow> </msqrt> <msqrt> <mrow> <msup><mrow><mi>S</mi></mrow> <mrow><mo>-</mo> <mn>1</mn></mrow> </msup> </mrow> </msqrt> </math> at 4 K using more than 10 times less power consumption than CMOS.