Remote epitaxy and exfoliation of vanadium dioxide via sub-nanometer thick amorphous interlayer.

Abstract

The recently emerged remote epitaxy technique, utilizing 2D materials (mostly graphene) as interlayers between the epilayer and the substrate, enables the exfoliation of crystalline nanomembranes from the substrate, expanding the range of potential device applications. However, remote epitaxy has been so far applied to a limited range of material systems, owing to the need of stringent growth conditions to avoid graphene damaging, and has therefore remained challenging for the synthesis of oxide nanomembranes. Here, we demonstrate the remote epitaxial growth of an oxide nanomembrane (vanadium dioxide, VO₂) with a sub-nanometer thick amorphous interlayer, which can withstand potential sputtering-induced damage and oxidation. By removing the amorphous interlayer, a 4-inch wafer-scale freestanding VO₂ nanomembrane can be obtained, exhibiting intact crystalline structure and physical properties. In addition, multi-shaped freestanding infrared bolometers are fabricated based on the epitaxial VO₂ nanomembranes, showing high detectivity and low current noise. Our strategy provides a promising way to explore various freestanding heteroepitaxial oxide materials for future large-scale integrated circuits and functional devices.