Antiferromagnetic semimetal terahertz photodetectors enhanced through weak localization.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39747838.
- Also identified by DOI 10.1038/s41467-024-55426-0 and PMC identifier 11696399.
- Licence recorded as CC BY-NC-ND.
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Abstract
Effective detection is critical for terahertz applications, yet it remains hindered by the unclear mechanisms that necessitate a deeper understanding of photosensitive materials with exotic physical phenomena. Here, we investigate the terahertz detection capabilities of the two-dimensional antiferromagnetic semimetal NbFeTe<sub>2</sub>. Our study reveals that the interaction between antiferromagnetic magnetic moments and electron spin induces disordered carriers to hop between localized states, resulting in a nonlinear increase in responsivity as temperature decreases. We integrate asymmetric electrodes to generate a sufficient Seebeck potential, enabling carriers to overcome the barrier of localized states and achieve reordering at room temperature. Additionally, the self-powered performance of the NbFeTe₂/graphene heterojunction is optimized by the built-in electric field, achieving peak responsivity of 220 V W<sup>-1</sup> and noise equivalent power of <20 pW Hz<sup>-1/2</sup>. These results shed light on the potential of antiferromagnetic semimetals in large-area, high-speed imaging applications, marking a significant advancement in terahertz photonics.