Selenium Interface Layers Boost High Mobility and Switch Ratios in van der Waals Electronics.
basic_science · Level V
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- Record sourced from PubMed, PMID 39760701.
- Also identified by DOI 10.1021/acs.nanolett.4c04467.
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Abstract
Achieving high mobility while minimizing off-current and static power consumption is critical for applications of two-dimensional field-effect transistors. Herein, a selenium (Se) sacrificial layer is introduced between the rhenium sulfide (ReS<sub>2</sub>) semiconductor and source/drain electrode. With the Se layer and postannealing process, the ReS<sub>2</sub> transistor significantly decreases the off-state current with a substantial increase in the on-state current density. Notably, the mobility reaches 237 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>, which is accompanied by an extraordinary current on/off ratio of 10<sup>11</sup> at 7 K. The theoretical calculations and noise analysis show that the improvement in device performance is ascribed to the Se protective layer, which effectively shields the semiconductor from direct exposure to high-energy metal particles, reducing the Schottky barrier and the number of defect states at the interface. Finally, Se sacrificial ReS<sub>2</sub> transistor-based versatile logic circuits including NAND and NOR logic are executed, which can be widely applied in integrated circuits.