Dual-Oxide Bridge-Trap Structure via Atomic Layer Infiltration for Enhanced Performance of Quantum Dot Photodetector.
basic_science · Level V
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- Record sourced from PubMed, PMID 39780537.
- Also identified by DOI 10.1021/acs.nanolett.4c05428.
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Abstract
Achieving high-performance lead sulfide quantum dot (PbS QD)-based photodetectors requires enhanced carrier transfer, which inevitably leads to an increased dark current. Balancing a high photocurrent and low dark current is crucial. In this work, a bridge-trap structure constructed by the atomic layer deposition of dual oxides is proposed to simultaneously enhance photoresponse performance and reduce dark current. Through the sequential infiltration of Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> with precisely controlled concentrations, a photodetector with enhanced responsivity and detectivity across visible to near-infrared regions is obtained. The precisely controlled Al<sub>2</sub>O<sub>3</sub> infiltration serves as a bridge between QDs, enhancing carrier transfer and increasing photocurrent. Meanwhile, atomic decoration of minimal TiO<sub>2</sub> serves as a carrier trap, significantly reducing the dark current (7.0 × 10<sup>-10</sup> A). Furthermore, an array imager fabricated with the modified PbS QDs demonstrates clear imaging of designed patterns under both visible and infrared light.