PO<sub>4</sub> <sup>3-</sup> Tetrahedron Assisted Chelate Engineering for 10.67%-Efficient Antimony Selenosulfide Solar Cells.
basic_science · Level V
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- Record sourced from PubMed, PMID 39791294.
- Also identified by DOI 10.1002/adma.202416885.
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Abstract
Anisotropic carrier transport and deep-level defect of antimony selenosulfide (Sb<sub>2</sub>(S,Se)<sub>3</sub>) absorber are two vital auses restraining the photovoltaic performance of this emerging thin-film solar cell. Herein, chelate engineering is proposed to prepare high-quality Sb<sub>2</sub>(S,Se)<sub>3</sub> film based on hydrothermal deposition approach, which realizes desirable carrier transport and passivated defects by using tetrahedral PO<sub>4</sub> <sup>3-</sup> ion in dibasic sodium phosphate (Na<sub>2</sub>HPO<sub>4</sub>, DSP). The PO<sub>4</sub> <sup>3-</sup> Lewis structure, on one hand in the form of [(SbO)<sub>3</sub>(PO<sub>4</sub>)] chelate, can adsorb on the polar planes of cadmium sulfide (CdS) layer, promoting the heterogeneous nucleation, and on the other hand, the tetrahedral PO<sub>4</sub> <sup>3-</sup> inhibits horizontal growth of (Sb<sub>4</sub>S(e)<sub>6</sub>)<sub>n</sub> ribbons due to size effects, thus achieving desirable [hk1] orientation. Moreover, the introduction PO<sub>4</sub> <sup>3-</sup> effectively passivates the antisite defect Sb<sub>S1</sub>. These synergistic effects have effectively improved carrier transport and reduced non-radiative recombination of the Sb<sub>2</sub>(S,Se)<sub>3</sub> absorber. Consequently, the DSP-modified Sb<sub>2</sub>(S,Se)<sub>3</sub> device efficiency increases from 8.59% to 10.67%.