Controllable <i>z</i>-Polarized Spin Current in Artificially Structured Ferromagnetic Oxide with Strong Spin-Orbit Coupling.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39804824.
- Also identified by DOI 10.1021/acs.nanolett.4c05502 and PMC identifier 11783597.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Realizing field-free switching of perpendicular magnetization by spin-orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicate fabrication and affect device stability and scalability. Here, we propose a novel approach using <i>z</i>-polarized spin currents for deterministic switching of perpendicular magnetization through interfacial engineering. We fabricate La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub>-SrIrO<sub>3</sub> (LSIMO) thin films with robust spin-orbit coupling and ferromagnetic order through orbital and lattice reconstruction, integrating SrIrO<sub>3</sub> and La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub> materials. Our investigation reveals that <i>y</i>- and <i>z</i>-polarized spin currents, driven by the spin Hall and spin-orbit precession effects, enable field-free switching of perpendicular magnetization. Notably, the <i>z</i>-polarized spin currents are tunable via the in-plane magnetization of LSIMO. These findings present a promising pathway for the development of energy-efficient spintronic devices, offering improved performance and scalability.