Topologically Engineered High-<i>Q</i> Quasi-BIC Metasurfaces for Enhanced Near-Infrared Emission in PbS Quantum Dots.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39812516.
- Also identified by DOI 10.1021/acs.nanolett.4c05710.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Enhancing photoluminescence (PL) efficiency in colloidal quantum dots is pivotal for next-generation near-infrared photodetectors, imaging systems, and photonic devices. Conventional methods, especially metal-based plasmonic structures, suffer from large optical losses, which limits their practical use. Here, we introduce a quasi-bound state in the continuum (quasi-BIC) metasurface on a silicon-on-insulator platform, tailored to provide high-quality factor resonances with minimized losses. Utilizing topological charge engineering and controlled in-plane asymmetry in silicon cylinder arrays, we developed a robust quasi-BIC capable of maintaining a high <i>Q</i> factor across a broad angular range, achieving an experimental <i>Q</i> factor of 3031 at normal incidence. This approach significantly enhances near-field interactions, achieving a ≤110-fold increase in PL for PbS quantum dots at 33 K and a 41-fold enhancement at room temperature. Our findings offer a scalable, cost-effective solution for enhancing light emission in advanced optoelectronic applications.