Doping Tunable CDW Phase Transition in Bulk 1T-ZrSe<sub>2</sub>.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39814357.
- Also identified by DOI 10.1021/acs.nanolett.4c06377 and PMC identifier 11783592.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Tunable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunneling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe<sub>2</sub>. We find that atomic impurities that locally shift the Fermi level (<i>E</i><sub><i>F</i></sub>) into the conduction band trigger a CDW reconstruction concomitantly to the opening of a gap at <i>E</i><sub><i>F</i></sub>. Our findings shed new light on earlier photoemission spectroscopy and theoretical studies of bulk 1T-ZrSe<sub>2</sub> and provide local insight into the electron-doping-mediated CDW transition observed in semiconducting TMDs.