Novel Magnetic-Field-Free Switching Behavior in vdW-Magnet/Oxide Heterostructure.

Abstract

Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, a new approach is demonstrated for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide Fe₃GeTe₂/SrTiO₃ heterostructure. This new magnetic-field-free switching is possible because the current-driven accumulated spins at the Rashba interface precess around an emergent interface magnetism, eventually producing an ultimate out-of-plane spin polarization. This interpretation is further confirmed by the switching polarity change controlled by the in-plane initialization magnetic fields with clear hysteresis. Van-der-Waals magnet and oxide are successfully combined for the first time, especially taking advantage of spin-orbit torque on the SrTiO₃ oxide. This allows this study to establish a new way of magnetic field-free switching. This work demonstrates an unusual perpendicular switching application of large spin Hall angle materials and precession of accumulated spins, and in doing so, opens up a new field and opportunities for van-der-Waals magnets and oxide spintronics.