Ultranarrow Semiconductor WS<sub>2</sub> Nanoribbon Field-Effect Transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39846459.
- Also identified by DOI 10.1021/acs.nanolett.4c01076 and PMC identifier 11803707.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancements in scaling down the gate and channel length of TMD field-effect transistors (FETs), the fabrication of sub-30 nm narrow channels and devices with atomic-scale edge control still poses challenges. Here, we demonstrate a crystallography-controlled nanostructuring technique to fabricate ultranarrow tungsten disulfide (WS<sub>2</sub>) nanoribbons as small as sub-10 nm in width. The WS<sub>2</sub> nanoribbon junctions having different widths display diodic current-voltage characteristics, providing a way to create and tune nanoscale device properties by controlling the size of the structures. The transport properties of the nanoribbon FETs are primarily governed by narrow channel effects, where the mobility in the narrow channels is limited by edge scattering. Our findings on nanoribbon devices hold potential for developing future-generation nanometer-scale van der Waals semiconductor-based devices and circuits.