Cross-Point Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors for Remanent Polarization-Driven In-Memory Computing.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39848620.
- Also identified by DOI 10.1021/acs.nanolett.4c04771.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) capacitors have been extensively explored for in-memory computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) compatible process. Several IMC approaches using resistance and capacitance states in ferroelectric HZO have been proposed for vector-matrix multiplication (VMM), but previous approaches suffer from limited accuracy and reliability. In this work, we propose a promising approach centered on the remanent polarization (P<sub>r</sub>) switching of binary ferroelectric HZO capacitor synapses. We experimentally demonstrate a simple pattern recognition task showing that the voltage readout of P<sub>r</sub> switching provides excellent accuracy due to its high on/off ratio and consequent reliability. We also performed large-scale simulations on a complex inference task, achieving high accuracy and immunity to device variations. We therefore believe that our proposed paradigm is promising for near-term neuromorphic IMC.