Engineering Titanium Dioxide/Titanocene-Polysulfide Interface for Flexible, Optical-Modulated, and Thermal-Tolerant Multilevel Memristor.
basic_science · Level V
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- Record sourced from PubMed, PMID 39919915.
- Also identified by DOI 10.1021/acs.nanolett.4c05786.
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Abstract
Multifunctional memristors with a high memory density, low power consumption, flexibility, programmability, and environmental robustness are essential for next-generation memories. In this work, a titanocene-polysulfide complex (Cp<sub>2</sub>TiS<sub>5</sub>) with strong S···S interactions and hydrogen bonds was synthesized and integrated with TiO<sub>2</sub> to create a novel Cu/TiO<sub>2</sub>/Cp<sub>2</sub>TiS<sub>5</sub>/Ag memristor. This device shows bipolar nonvolatile memory performance with a remarkable ON/OFF ratio (10<sup>4.8</sup>), low switching voltages (<i>V</i><sub>SET</sub>, -0.16 V; <i>V</i><sub>RESET</sub>, +0.15 V), and low power consumption (2.7 × 10<sup>-4</sup> μW). It exhibits multilevel memory behavior, flexibility, optical modulation (<i>V</i><sub>SET</sub> decreases from -1.35 to -0.17 V with decreasing irradiation wavelength), and thermal tolerance (up to 200 °C). The electron-rich Cp<sub>2</sub>TiS<sub>5</sub> layer protects the Ag-CFs, while TiO<sub>2</sub>'s oxygen vacancies and unsaturated Ti atoms interact with sulfur from Cp<sub>2</sub>TiS<sub>5</sub>, lowering the Schottky barrier and facilitating charge transport. This work offers promising opportunities in flexible memristive devices for neuromorphic computing under extreme conditions.