Piezoresistive Platinum Diselenide Pressure Sensors with Reliable High Sensitivity and Their Integration into Complementary Metal-Oxide-Semiconductor Circuits.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 39936243.
- Also identified by DOI 10.1021/acsnano.4c15098 and PMC identifier 11867020.
- Licence recorded as CC BY-NC-ND.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Membrane-based sensors are an important market for microelectromechanical systems (MEMS). Two-dimensional (2D) materials, with their low mass, are excellent candidates for suspended membranes to provide high sensitivity, small footprint sensors. The present work demonstrates pressure sensors employing large-scale-synthesized 2D platinum diselenide (PtSe<sub>2</sub>) films as piezoresistive membranes supported only by a thin polymer layer. We investigate three different synthesis methods with contrasting growth parameters and establish a reliable high yield fabrication process for suspended PtSe<sub>2</sub>/PMMA membranes across sealed cavities. The pressure sensors reproducibly display sensitivities above 6 × 10<sup>-4</sup> kPa<sup>-1</sup>. We show that the sensitivity clearly depends on the membrane diameter and the piezoresistive gauge factor of the PtSe<sub>2</sub> film. Reducing the total device size by decreasing the number of membranes within a device leads to a significant increase in the area-normalized sensitivity. This allows the manufacturing of pressure sensors with high sensitivity but a much smaller device footprint than the current state-of-the-art MEMS technology. We further integrate PtSe<sub>2</sub> pressure sensors with CMOS technology, improving the technological readiness of PtSe<sub>2</sub>-based MEMS and NEMS devices.