Position-Sensitive Domain-by-Domain Switchable Ferroelectric Memristor.

Abstract

Domain-wall electronics based on the tunable transport in reconfigurable ferroic domain interfaces offer a promising platform for in-memory computing approaches and reprogrammable neuromorphic circuits. While conductive domain walls have been discovered in many materials, progress in the field is hindered by high-voltage operations, stability of the resistive states and limited control over the domain wall dynamics. Here, we show nonvolatile memristive functionalities based on precisely controllable conductive domain walls in tetragonal Pb(Zr,Ti)O₃ thin films within a two-terminal parallel-plate capacitor geometry. Individual submicron domains can be manipulated selectively by position-sensitive low-voltage operations to address distinct resistive states with nanoampere-range conduction readout. Quantitative phase-field simulations reveal a complex pattern of interpenetrating a- and c-domain associated with the formation of 2D conducting layers at the intertwined regions and the emergence of 3D percolation channels of extraordinary high conductivity. Subnanometer resolution polarization mapping experimentally proves the existence of such extensive segments of charged tail-to-tail domain walls with unconventional structure at the ferroelastic-ferroelectric domain boundaries.