Two-Dimensional Cr<sub>3</sub>Te<sub>4</sub>/WS<sub>2</sub>/Fe<sub>3</sub>GeTe<sub>2</sub>/WTe<sub>2</sub> Magnetic Memory with Field-Free Switching and Low Power Consumption.
basic_science · Level V
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- Record sourced from PubMed, PMID 39950430.
- Also identified by DOI 10.1002/adma.202419939.
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Abstract
Spin-orbit torque (SOT) magnetic memory technology has garnered significant attention due to its ability to enable field-free switching of magnets with strong perpendicular magnetic anisotropy (PMA). However, concerns regarding power consumption of SOT-memory are persisting. Here, this work proposes a method to construct magnetic tunnel junction (MTJ) by transferring chemically vapor-deposited two-dimensional (2D) Cr<sub>3</sub>Te<sub>4</sub>/WS<sub>2</sub> van der Waals (vdW) heterostructures onto 2D Fe<sub>3</sub>GeTe<sub>2</sub> (FGT) magnet. The robustness and tunability of 2D magnets allow MTJs to exhibit non-volatility, multiple output states, and impressive cycling durability. MTJs with thin WS<sub>2</sub> barriers (fewer than six layers) exhibit a linear tunneling effect, achieving a low resistance-area product (RA) of 15.5 kΩ·µm<sup>2</sup> using bilayer WS<sub>2</sub>, which facilitats low-power operation. Furthermore, the different 2D magnets display a significant anti-parallel window of up to 8 kOe. SOT-memory based on the typical MTJ demonstrates a low write consumption of 0.3 mJ and read consumption of 9.7 nJ, marking a significant advancement in 2D vdW SOT-memory. This research has pointed out a new direction for constructing low power consumption SOT-memory with PMA field-free switching.