SWAP Gate for Spin Qubits Based on Silicon Devices Integrated with a Micromagnet.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40017109.
- Also identified by DOI 10.1021/acs.nanolett.4c05540.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
In our toolbox of quantum gates for spin qubits, the SWAP-family gates based on Heisenberg exchange coupling are quite versatile: the SWAP gate can help solve the connectivity problem by realizing both short- and long-range spin state transfer, while the <math xmlns="http://www.w3.org/1998/Math/MathML"><msqrt><mrow><mi>S</mi><mi>W</mi><mi>A</mi><mi>P</mi></mrow></msqrt></math> gate is a basic two-qubit entangling gate. Here we demonstrate a SWAP gate in a double quantum dot in isotopically enriched silicon in the presence of a micromagnet. We achieve a two-orders-of-magnitude adjustable ratio between the exchange coupling <i>J</i> and the Zeeman energy difference Δ<i>E</i><sub><i>z</i></sub>, overcoming a major obstacle for a high-fidelity SWAP gate. We also calibrate the single-qubit local phases, evaluate the logical-basis fidelity of the SWAP gate, and further analyze the dominant error sources. These results pave the way for high-fidelity SWAP gates and processes based on them, such as quantum communication on chip and quantum simulation.