Ultrafast Switching Speed Demonstrated in Wafer-Scale Integration of Crystalline Undoped HfO<sub>2</sub>-Based Ferroelectrics.
basic_science · Level V
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- Record sourced from PubMed, PMID 40029801.
- Also identified by DOI 10.1021/acs.nanolett.4c05765.
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Abstract
Hafnium oxide-based ferroelectric materials have been researched extensively for high-speed, low-power nonvolatile memory devices. However, doping HfO<sub>2</sub> through atomic layer deposition (ALD) cycles primarily aims to enhance specific properties but also introduces challenges in balancing performance and reliability. Therefore, understanding the properties of intrinsic crystalline HfO<sub>2</sub>-based ferroelectric materials and developing undoped HfO<sub>2</sub> ferroelectric devices with exceptional comprehensive properties are crucial. Here, we successfully fabricated well-engineered undoped HfO<sub>2</sub> ferroelectric devices with high endurance (>10<sup>11</sup> cycles), large grain size (>60 nm), and ultrahigh switching speed (∼1 ns). The results indicate that controlling the oxygen partial pressure can regulate the concentration of oxygen vacancies (V<sub>O</sub>), thereby stabilizing the ferroelectric phase. Finally, a comprehensive study of device variability is conducted, confirming a low device to device (D2D) variation. The outstanding comprehensive performance will enhance confidence in undoped HfO<sub>2</sub> as a viable candidate for ferroelectrics in VLSI applications.