Ferroelectricity in Orthorhombic Zirconia Thin Films.
basic_science · Level V
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- Record sourced from PubMed, PMID 40048556.
- Also identified by DOI 10.1021/acs.nanolett.4c05612.
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Abstract
Ferroelectric fluorite oxides such as hafnium (HfO<sub>2</sub>)-based materials are one of the most promising candidates for future large-scale integrated circuits (ICs), while zirconia (ZrO<sub>2</sub>)-based fluorite materials, which have the same structure as HfO<sub>2</sub> and <b>more abundant resources and lower cost of raw materials</b>, are usually thought to be anti- or ferroelectric-like. Here, we report a remanent polarization (<i>P</i><sub><i>r</i></sub>) of ∼15 μC/cm<sup>2</sup> in orthorhombic ZrO<sub>2</sub> thin films at 77 K. This ferroelectricity arises from an electric field-induced antiferroelectric to ferroelectric phase transition, which is particularly noticeable at 77 K. Our work reveals the ferroelectricity in ZrO<sub>2</sub> thin films and offers a new pathway to understand the origin of ferroelectricity in fluorite oxides.